Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using a micro-Raman technique  

作　　者：杨丽媛 薛晓咏 张凯 郑雪峰 马晓华 郝跃 

机构地区：[1]Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University [2]School of Technical Physics,Xidian University

出　　处：《Chinese Physics B》2012年第7期484-486,共3页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China (Grant No. 2011CBA00600);the National Natural Science Foundation of China (Grant No. 61106106);the Fundamental Research Funds for the Central Universities, China (Grant No. K50510250006)

摘　　要：Self-heating in a multifinger A1GaN/GaN high electron mobility transistor （HEMT） is investigated by micro-Raman spectroscopy, The device temperature is probed on the die as a function of applied bias. The operating temperature of the A1GaN/GaN HEMT is estimated from the calibration curve of a passively heated A1GaN/GaN structure. A linear increase of junction temperature is observed when direct current dissipated power is increased. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1 ℃ is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge.Self-heating in a multifinger A1GaN/GaN high electron mobility transistor （HEMT） is investigated by micro-Raman spectroscopy, The device temperature is probed on the die as a function of applied bias. The operating temperature of the A1GaN/GaN HEMT is estimated from the calibration curve of a passively heated A1GaN/GaN structure. A linear increase of junction temperature is observed when direct current dissipated power is increased. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1 ℃ is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge.

关 键 词：A1GaN/GaN high electron mobility transistors Raman spectroscopy TEMPERATURE 

分 类 号：TN32[电子电信—物理电子学] TS933[轻工技术与工程]