高效率X波段GaN MMIC功率放大器的研制  

Research of High Efficiency X-Band GaN MMIC Power Amplifier

作　　者：崔玉兴[1] 王民娟[1] 付兴昌[1] 马杰[1] 倪涛[1] 蔡树军[2] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2012年第7期513-516,共4页Semiconductor Technology

摘　　要：突破了GaN MMIC功率放大器的设计、制造、测试等关键技术,研制成功X波段GaN MMIC功率放大器。设计及优化了电路拓扑结构及电路参数,放大器芯片采用了国产外延材料及标准芯片制作工艺。单片功率放大器包含两级放大电路,采用了功率分配及合成匹配电路,输入输出阻抗均为50Ω。制作了微波测试载体及夹具,最终实现了X波段GaN MMIC功率放大器微波参数测试。在8.7～10.9 GHz频率范围内,该功率放大器输出功率大于16 W,功率增益大于14 dB,增益波动小于0.4 dB,输入驻波比小于2∶1,功率附加效率大于40%,带内效率最高达52%。The X-band GaN MMIC power amplifier was fabricated by using the technology of MMIC design, fabrication and test. The circuit topology and characteristics of GaN MMIC were optimized. The circuit die was made by using domestic epitaxial material and standard wafer process. The amplifier configures a series of 2-stage high electron mobility transistor （HEMT） transistors. The power separation and combining technique were used in the amplifier. The input and output impendence are 50 ~. The amplifier was finally tested by using microwave testing carriers and clamping fixtures. The amplifier shows a output power more than 16 W, a power gain more than 14 dB, a gain change less than 0.4 dB, an input standing wave radio less than 2：1, a power add efficiency more than 40% , a power efficiency of 52% at the frequency from 8.7 GHz to 10.9 GHz .

关 键 词：功率放大器 器件模型 氮化镓 X波段 单片微波集成电路 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN722.75