基于电纺纤维的CuO/SnO_2薄膜及其气敏特性  

Fabrication and Gas Sensing Properties of CuO/SnO_2 Films Based on Electrospun Nanofibers

作　　者：赵燕[1] 何秀丽[1] 贾建[1] 高晓光[1] 李建平[1] 

机构地区：[1]中国科学院电子学研究所传感技术国家重点实验室,北京100190

出　　处：《微纳电子技术》2012年第7期449-453,共5页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(60871055)

摘　　要：研究了一种基于静电纺丝纳米纤维制备异质结薄膜的方法。采用静电纺丝技术在硅衬底上依次沉积PVP/CuCl2.2H2O和PVP/SnCl4.5H2O纳米纤维,经过氧等离子体刻蚀并高温退火处理后得到了基于多孔纳米纤维的CuO/SnO2异质结薄膜。利用扫描电子显微镜(SEM)和X射线衍射技术(XRD)对纤维的形貌和结晶状态进行了表征。电学特性及气敏特性测试结果表明,该异质结薄膜具有明显的整流特性,在100℃的工作温度下,对H2S气体响应和恢复速度快、检测限低、选择性好。A novel method to fabricate the heterojunction film based on electrospun nanofibers was studied. The PVP （poly vinyl pyrrolidone）/CuCl1 · 2H20 and PVP/SnCl4 · 5H2O nanofi- bers were deposited on the silicon substrate successively with the electrospinning technology. The heterojunction film of CuO/SnO2 based on porous nanofibers were obtained after oxygen plasma etching and high temperature annealing. The morphology and crystalline structure of the fibers were characterized by scanning electron microscope （SEM） and X-ray diffraction （XRD）. The electrical and the gas sensing properties of the hetrojunction film were measured. The hetrojune- tion film show good rectifying behavior indicating the formation of a diode. Furthermore, the he- terojunction film shows fast response/recovery, low detection limit and good selectivity to H2 S at the operating temperature of 100 ~C due to the porous structure of nanofibers.

关 键 词：静电纺丝 纳米纤维 异质结薄膜 等离子体刻蚀 气敏特性 

分 类 号：TB383[一般工业技术—材料科学与工程]