SOI-LIGBT器件正偏安全工作区的研究  

Research on Forward Bias Safe Operating Area of SOI-LIGBT

作　　者：霍昌隆[1] 刘斯扬[1] 钱钦松[1] 

机构地区：[1]东南大学国家专用集成电路系统工程技术研究中心,江苏南京210096

出　　处：《电子科技》2012年第7期106-109,113,共5页Electronic Science and Technology

基　　金：江苏省自然科学基金资助项目(BK2011059)

摘　　要：研究了高压SOI-LIGBT器件的单脉冲正偏安全工作区(FBSOA)的绘制方法。首先,分别提取器件的热阻与热容,并借助热阻抗公式计算器件的瞬态热阻抗,进而根据热阻抗与最大允许功率之间的关系,获得直流与脉冲条件下的正偏安全工作区。同时,还对其二次击穿边界与安全工作区的相互关系做了进一步分析,为更加准确地确定高压LIGBT器件的单脉冲安全工作区提供理论指导。The plotting method of single pulse forward bias safe operating area （FBSOA） on the high voltage SOI-LIGBT is investigated in this paper. Firstly, the thermal resistance and thermal capacitance are extracted separately, and then the transient thermal impedance can be calculated based on the extracted values. Moreover, the FBSOA at DC and pulse conditions could be obtained by the relation between maximum power dissipation and the thermal impedance. Meanwhile, the relations between the second break down location and FBSOA are analyzed further, which gives the theoretic instructions for plotting FBSOA of high voltage SOI-LIGBT more accurately.

关 键 词：正偏安全工作区 热阻 热容 电热耦合 

分 类 号：TN32[电子电信—物理电子学]