Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD  

作　　者：陶志阔 张荣 修向前 崔旭高 李丽 李鑫 谢自力 郑有炓 郑荣坤 Simon P Ringer 

机构地区：[1]Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University [2]College of Electronic Science and Engineering,Nanjing University of Posts and Telecommunications [3]Australia Key Center for Microscopy and Microanalysis,University of Sydney

出　　处：《Journal of Semiconductors》2012年第7期16-19,共4页半导体学报（英文版）

基　　金：supported by the Special Funds for Major State Basic Research Project,China(No.2011CB301900);the Hi-Tech Research Project,China(No.2009AA03A198);the National Natural Science Foundation of China(Nos.60990311,60820106003,608201060,60906025,60936004,61106009);the Natural Science Foundation of Jiangsu Province,China(Nos.BK2008019,K2009255,BK2010178, BK2010385);the Research Funds from NJU-Yangzhou Institute of Opto-Electronics

摘　　要：We have grown transition metal （Fe, Mn） doped GaN thin films on c-oriented sapphire by metal-organic chemical vapor deposition. By varying the flow of the metal precursor, a series of samples with different ion con- centrations are synthesized. Microstructural properties are characterized by using a high-resolution transmission electron microscope. For Fe over-doped GaN samples, hexagonal Fe3N clusters are observed with Fe3N （0002） parallel to GaN （0002） while for Mn over-doped GaN, hexagonal Mn6N2.58 phases are observed with Mn6N2.58（0002） parallel to GaN （0002）. In addition, with higher concentration ions doping into the lattice matrix, the partial lattice orientation is distorted, leading to the tilt orGaN （0002） planes. The magnetization of the Fe over-doped GaN sam- ple is increased, which is ascribed to the participation of ferromagnetic iron and Fe3N. The Mn over-doped sample displays very weak ferromagnetic behavior, which probably originates from the Mn6N2.58.We have grown transition metal （Fe, Mn） doped GaN thin films on c-oriented sapphire by metal-organic chemical vapor deposition. By varying the flow of the metal precursor, a series of samples with different ion con- centrations are synthesized. Microstructural properties are characterized by using a high-resolution transmission electron microscope. For Fe over-doped GaN samples, hexagonal Fe3N clusters are observed with Fe3N （0002） parallel to GaN （0002） while for Mn over-doped GaN, hexagonal Mn6N2.58 phases are observed with Mn6N2.58（0002） parallel to GaN （0002）. In addition, with higher concentration ions doping into the lattice matrix, the partial lattice orientation is distorted, leading to the tilt orGaN （0002） planes. The magnetization of the Fe over-doped GaN sam- ple is increased, which is ascribed to the participation of ferromagnetic iron and Fe3N. The Mn over-doped sample displays very weak ferromagnetic behavior, which probably originates from the Mn6N2.58.

关 键 词：MOCVD DMS high-resolution TEM 

分 类 号：TN304.055[电子电信—物理电子学]