A low on-resistance SOI LDMOS using a trench gate and a recessed drain  

作　　者：葛锐 罗小蓉 蒋永恒 周坤 王沛 王琦 王元刚 张波 李肇基 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China

出　　处：《Journal of Semiconductors》2012年第7期43-46,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.60976060,61176069);the National Key Laboratory of AnalogIntegrated Circuit(NLAIC),China(No.9140C090304110C0905);the State Key Laboratory of Electronic Thin Films and Integrated Devices,China(No.CXJJ201004)

摘　　要：An integrable silicon-on-insulator （SOl） power lateral MOSFET with a trench gate and a recessed drain （TGRD MOSFET） is proposed to reduce the on-resistance. Both of the trench gate extended to the buried oxide （BOX） and the recessed drain reduce the specific on-resistance （Ron, sp） by widening the vertical conduction area and shortening the extra current path. The trench gate is extended as a field plate improves the electric field distribution. Breakdown voltage （BV） of 97 V and Ron, sp of 0.985 mf2-cm2 （l/os = 5 V） are obtained for a TGRD MOSFET with 6.5/xm half-cell pitch. Compared with the trench gate SOI MOSFET （TG MOSFET） and the conventional MOSFET, Ron＇ sp of the TGRD MOSFET decreases by 46% and 83% at the same BV, respectively. Compared with the SOI MOSFET with a trench gate and a trench drain （TGTD MOSFET）, BV of the TGRD MOSFET increases by 37% at the same Ron,sp.An integrable silicon-on-insulator （SOl） power lateral MOSFET with a trench gate and a recessed drain （TGRD MOSFET） is proposed to reduce the on-resistance. Both of the trench gate extended to the buried oxide （BOX） and the recessed drain reduce the specific on-resistance （Ron, sp） by widening the vertical conduction area and shortening the extra current path. The trench gate is extended as a field plate improves the electric field distribution. Breakdown voltage （BV） of 97 V and Ron, sp of 0.985 mf2-cm2 （l/os = 5 V） are obtained for a TGRD MOSFET with 6.5/xm half-cell pitch. Compared with the trench gate SOI MOSFET （TG MOSFET） and the conventional MOSFET, Ron＇ sp of the TGRD MOSFET decreases by 46% and 83% at the same BV, respectively. Compared with the SOI MOSFET with a trench gate and a trench drain （TGTD MOSFET）, BV of the TGRD MOSFET increases by 37% at the same Ron,sp.

关 键 词：trench gate recessed drain ON-RESISTANCE breakdown voltage 

分 类 号：TN386[电子电信—物理电子学]