GaAs(100)热退火表面的变角XPS定量分析  

Quantitative Investigation of Surface Layer Structure of GaAs(100) After Thermal Annealing by Angular Dependent XPS

作　　者：汪贵华[1] 杨伟毅[1] 常本康[1] 

机构地区：[1]南京理工大学电子工程与光电技术学院,南京210094

出　　处：《Journal of Semiconductors》2000年第7期657-661,共5页半导体学报（英文版）

摘　　要：利用变角 X射线光电子能谱 (XPS)及其层状结构的计算程序分析和计算 Ga As(1 0 0 )在60 0— 675℃热退火处理后表面组分 /深度的定量变化 .在 Ga As表面氧化物与衬底之间存在一过渡层 ,即弛豫层 ,该层在自然情况下为富 As的结构 ,经 60 0℃以上的温度退火后 ,成为富 Ga的结构 .实验和计算发现该层的厚度和 Ga的相对含量随退火温度增加而增大 ,即弛豫层中的Ga含量由 53.4%变为 62 .1 % ,弛豫层厚度由 1 .3nm变为 2 .2 nm.By employing angular dependent X\|Ray Photoelectron Spectroscopy (XPS) technique, an analysis of chemical composition/depth of GaAs(100) surface after thermal annealing ranging from 600℃ to 675℃ is achieved.A transition layer between the surface oxide layer and substrate, being As\|abundant naturally,gets Ga\|abundent after annealing above 600℃.It is found that the relative atomic concentration of Ga and the thickness of the transition layer are increasing when the annealing temperature gets higher,i.e. Ga atomic concentration is from 53 4% to 62 1% and the thickness from 1 3nm to 2 2nm at the temperature ranging from 600℃ to 675℃,while the As oxide and Ga oxide are eliminated gradually.

关 键 词：砷化镓 X射线光电子能谱 热退火 

分 类 号：TN304[电子电信—物理电子学]