光电材料的俄歇电子谱分析  

AES Analysis of Optoelectronic Materials

作　　者：尹燕萍[1] 罗江财[1] 杨晓波[1] 何伟全 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2000年第A03期84-86,共3页Semiconductor Optoelectronics

摘　　要：俄歇电子能谱 (AES)是测定固体表面元素组分的分析技术。由于AES具有很高的空间分辨率和表面灵敏度 ,并可以通过离子束溅射刻蚀获得组分深度剖面分布 ,所以它在各种材料 ,特别是微电子材料、光电子材料和纳米薄膜材料的分析中应用广泛。Auger electron spectroscopy (AES) is a technique for determination of composition of solid surface. Thanks to its high space-resolution, surface sensitivity and capability of obtaining composition - profile by ion sputtering etching, AES is widely used in the analysis on various materials, especially optoelectronic materials and nanometer thin film materials. This paper describes briefly the application of PH1595 multi-proble AES to analysis of optoelectronic materials.

关 键 词：俄歇电子能谱 定性分析 光电材料 

分 类 号：TN204[电子电信—物理电子学]