Er^+注入Yb掺杂的ZnO波导膜的光学及结构特性研究  

Optical and structural properties of Yb-doped ZnO waveguide-films with Er^+ implantation

作　　者：齐俊鹤[1] 王凤翔[1] 卢菲[2] 陈志华[1] 宋红莲[1] 

机构地区：[1]山东建筑大学理学院,山东济南250101 [2]山东大学信息科学与工程学院,山东济南250100

出　　处：《山东建筑大学学报》2012年第3期262-266,275,共6页Journal of Shandong Jianzhu University

基　　金：国家自然科学基金项目(51042002);山东省自然科学基金项目(2009 ZRB019DZ)

摘　　要：利用射频磁控溅射技术在蓝宝石衬底上沉积ZnO:Yb光波导薄膜,然后用离子注入技术将能量为200keV的Er+离子注入薄膜中,剂量为1×1015ions/cm2。应用棱镜耦合技术、卢瑟福背散射(RBS)技术、X射线衍射(XRD)技术和荧光光谱等技术研究了薄膜的波导性质、基本结构、厚度、组分、Er+的射程情况及光学频率上转换性质。实验发现掺杂Yb和Er的薄膜可以形成光波导结构,但波导质量较纯ZnO波导膜差,膜的有效折射率及沉积速率随Yb掺杂量增加有减小趋势;薄膜呈ZnO高度c—轴取向生长,Yb和Er能有效掺杂进ZnO晶格,ZnO晶格常数受Yb掺杂量的不同而变化;在980nm激光激发下没有发现在300～720nm间的光学频率上转换。Yb-doped ZnO optical waveguide thin films are deposited on sapphire substrates by RF magnetron sputtering technology, and then Er^＋ ions are implanted into the asdeposited films, the energy is 200 KeV and implantation dose is 1 ×10^15 ions/cm^2. Waveguide properties is studied by prism coupling method. Film thickness, element components are studied by Rutherford backscattering technology （RBS）. The basic structure and phase of the films are studied by using X-ray diffraction （XRD）. The property of optical frequency upconversion is investigated by fluorescence spectrometer. The results show that the Er-implanted-Yb-doped films have waveguide structure but the waveguide properties is poor than the pure ZnO films which prepared by magnetron sputtering, and that the effective refractive indices and film forming rates decrease as Yb doped concentration levels increase. ZnO films are well-developed c-axis preferred orientation structure, Yb and Er are incorporated into the ZnO lattice successfully, while the lattice constants vary by the Yb doping amount. Excitated by the 980 nm laser in room temperature, stimulated upconvension emission is not observed between 300 -720 nm.

关 键 词：离子注入 掺杂 ZNO 光波导 ER YB 

分 类 号：O484.4[理学—固体物理]