具有C轴取向Al^(3+)掺杂型ZnO薄膜的溶胶-凝胶法制备及其性能研究  

The study on the preparation of Al^(3+) doped ZnO thin films with [002] oriented by sol-gel method and its properties

作　　者：郑春满[1] 宋植彦[1] 魏海博[1] 帖楠[1] 谢凯[1] 

机构地区：[1]国防科技大学航天与材料工程学院,湖南长沙410073

出　　处：《国防科技大学学报》2012年第3期33-37,共5页Journal of National University of Defense Technology

基　　金：湖南省自然科学基金资助项目(10JJ4045);国防科技大学校预研资助项目(JC08-01-06)

摘　　要：以乙二醇甲醚为溶剂,采用Sol-Gel法制备出具有C轴取向、可导电的Al3+离子掺杂ZnO透明薄膜,并利用场发射扫描电镜、X-射线衍射、能谱分析、标准四探针和反射光谱仪等对薄膜的组成、结构和光学性能进行了分析。结果表明:Al3+离子掺杂ZnO薄膜为六方纤锌矿型结构,由六棱柱状阵列构成,具有C轴择优取向;薄膜电阻率随Al3+离子掺杂浓度的升高而降低;在可见光区域,薄膜透光率随Al3+离子掺杂浓度的升高而降低,掺杂3%ZnO薄膜的透光率达到90%左右,禁带宽度为3.25 eV,具备制作薄膜太阳能电池透明导电电极材料的应用价值。The aluminum-doped ZnO thin films with [002] oriented were prepared using 2-methoxyethan as a solvent system by the sol-gel method. The composition, structure and optical properties were studied by means of Scanning Electron Microscopy （ SEM）, X-ray Diffraction （XRD）, Energy-dispersive X-ray microanalysis （EDX） and Spectral shape. The results showed that the ZnO films are hexagonal wurtzite structure, which consists of hexagonal rods growing along C axis. The resistivity of the aluminum-doped ZnO thin films decreases with the increase of the content of Al3 ＋ . In the visible region, the light transmittance of the ZnO thin films with 3% aluminum is about 90%, and the band gap is about 3.25 eV, which can meet the material requirements for photoelectric devices such as photovoltaic solar cell.

关 键 词：溶胶-凝胶 ZNO薄膜 Al3+离子掺杂 制备 

分 类 号：O648[理学—物理化学]