AlGaInP/GaAs HBT制备中质子注入隔离  

PROTON IMPLANT ISOLATION OF AlGaInP/GaAs HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURES IN FABRICATION

作　　者：程知群[1] 孙晓玮 夏冠群[1] 李洪芹[1] 盛怀茂[1] 钱蓉[1] 

机构地区：[1]中国科学院上海冶金研究所,上海200050

出　　处：《物理学报》2000年第2期375-378,共4页Acta Physica Sinica

基　　金：国家"九五"攻关!(批准号 :97 773 0 3 0 1)资助的课题

摘　　要：对HBT工艺中质子隔离注入及其掩膜方法进行了研究.通过计算确定了最佳注入剂量.在一定的温度下退火,可增强隔离效果,最佳退火温度依赖于离子注入剂量,当温度增高时,电阻率又开始下降,并趋向恢复到退火前的状态.采用Si3N4加光刻胶双层掩膜,工艺简单,重复性好,样品无沾污现象,隔离效果佳,制备的器件直流特性较好.In this paper,proton implant isolation and mask method are studied in Heterojunction bipolar transistor fabrication technology.By means of computation,the best implant dose is determined.After the wafer is annealed,the implant isolation efficiency is better.The best annealing temperature depends on ion implant dose.As temperature continues to rise,its resistivity starts to drop and tends to return to the state before annealing.Both Si 3N 4 and photoresist are used as double layer mask,because the technology is simple and reproducibility is reliable,the wafer is not contaminated,implant efficiency and dc performance of the device are good.

关 键 词：AlGaInP/GaAs 异质结比极型晶体管 质子注入隔离 

分 类 号：TN322.8[电子电信—物理电子学]