重掺磷衬底上外延层生长工艺研究  

Study of the Epitaxial Growth Process on the Heavily Doped Phosphorus Substrate

作　　者：高淑红[1] 袁肇耿[1] 赵丽霞[1] 

机构地区：[1]河北普兴电子科技股份有限公司,石家庄050051

出　　处：《微纳电子技术》2012年第8期557-561,共5页Micronanoelectronic Technology

摘　　要：重掺磷衬底上硅外延片是制作集成电路开关电源的肖特基二极管和场控高频电力电子器件的首选产品。重掺磷衬底外延片可以大幅降低压降中半导体部分引起的压降所占的比例。介绍了重掺磷外延片的一种实用生产技术,在高浓度衬底外延后失配现象、杂质外扩抑制方法、减少外延过程中衬底磷杂质的挥发等方面进行了研究。在研究的基础上使用CSD公司的EpiPro5000型外延设备进行工艺试验,采用盖帽层分层生长、变流量赶气和低温度生长等工艺条件控制磷杂质的扩散和挥发,从而减少自掺杂效应,获得良好的电阻率均匀性和陡峭的外延层过渡区。试验结果已成功应用于大规模生产,得到了用户认可。The epitaxial wafer on the heavily doped phosphorus substrate is the preferred product for the Schottky diodes in the integrated circuit switching power supply and field control high frequency power electronic devices. The epitaxial wafer on the heavily doped phosphorus substrate can greatly reduce the voltage drop caused by the semiconductor component proportion. A practical production technology of the epitaxial wafer on the heavily doped phosphorus substrate was introduced. The study was carried out from the aspects of the mismatch phenomenon after the high concentrations of the substrate epitaxial growth, suppression method of phosphorus diffusion and reduction of the phosphorus volatilization in the epitaxial growth process. On the basis of the research, the process experiments were carried out using the CSD EpiPro5000 type epitaxial equipment. Through the cap layer delamination growth, variable flow purge, low temperature growth and other process conditions, the control of the phosphorus diffusion and evaporation were obtained, thus the autodoping effect was reduced, the good resistivity uniformity and steep epitaxial layer transition zone were realized. The research results were successfully applied to the mass production and authorized by the customers.

关 键 词：正向压降 磷掺杂 失配 杂质扩散 杂质外扩 

分 类 号：TN304.054[电子电信—物理电子学]