硅纳米晶的制备及影响其光致发光因素研究  

On Preparation of Si Nanocrystals and Factors Relating with Their Photoluminescence

作　　者：陈家荣[1] 朱江[2] 陆明[2] 

机构地区：[1]贵州民族大学计算机与信息工程学院,贵阳550001 [2]复旦大学光科学与工程系,上海200433

出　　处：《河南师范大学学报（自然科学版）》2012年第4期58-61,共4页Journal of Henan Normal University(Natural Science Edition)

基　　金：贵州民族大学2012年科研基金资助项目

摘　　要：经过大量的实验得出硅纳米晶(Si-nc)的发光波长位置在750nm附近,从而验证了Si-nc的制备成功.其次,研究了在Si-nc的制备过程中制备不同的多层结构,掺杂不同的稀土元素,是否钝化等方法对材料进行处理后的Si-nc的光致发光强度,其实验结果表明多层结构对Si-nc的发光强度有一定的影响,掺杂不同的稀土元素后Si-nc的发光强度不同,且猝灭效应会降低Si-nc的发光强度,而钝化方法可提高Si-nc的发光强度.In this paper, we obtained emission wavelength of Si nanocrystals（Si-nc） location in nearby 750nm by a lot of experiments, thus we verified the Si-nc preparation success. Secondly, photoluminescence of Si-nc which were handled by pre-paring different multilayer structures, doping with different rare earth elements,and before and after passivation in the preparation process were investigated. The experimental results showed that multilayer structures and dopins with different rare earth elements will impact photoluminescence of Si-nc, but passivation method can enhance photoluminescence of Si-nc.

关 键 词：Si-nc 光致发光 退火 H钝化 猝灭效应 量子限制效应 

分 类 号：O437[机械工程—光学工程] O48[理学—光学]