Ge_xC_(1-x)薄膜在红外增透保护膜系设计和制备中的应用  

APPLICATION OF Ge_xC_(1-x)FILMS TO DESIGN AND DEPOSITION OF INFRARED ANTIREFLECTION AND PROTECTION FILMS 

作　　者：宋建全[1] 刘正堂[1] 于忠奇[1] 耿东生[1] 郑修麟[1] 

机构地区：[1]西北工业大学材料科学与工程学院,陕西西安710072

出　　处：《红外与毫米波学报》2000年第4期266-268,共3页Journal of Infrared and Millimeter Waves

基　　金：航空科学基金! (编号 93G5312 0 )资助项目

摘　　要：用磁控反应溅射 (RS)法制备出 Gex C1 - x薄膜 ,它的折射率可在 1 .6～ 4.0之间变化 .设计出不同厚度的 Gex C1 - x均匀增透膜系和非均匀增透膜系 ,并在 Zn S基片上制备出 Gex C1 - x均匀增透膜系 .设计结果表明 ,均匀膜系能实现某一波段范围内增透 ,非均匀膜系能实现宽波段增透 ;当厚度增加时 ,均匀增透膜系的透过率曲线变得急剧振荡 ,非均匀膜系的透过率曲线变得更为平滑 ,且向长波段扩展 .实验结果表明 ,在 8～ 1 1 .5 μm波段 ,Zn S基片双面镀 Gex C1 - x均匀增透膜系后平均透过率为 90 .4% ,比未镀膜的 Zn S基片 (平均透过率为 73.9% )净增加 1 6 .5 % .Ge x C 1-x films were deposited by RF magnetron reactive sputtering. Its refractive index can vary between 1.6 and 4.0. Different thicknesses of Ge x C 1-x antireflective films with Ge x C 1-x as homogeneous and inhomogeneous films were designed. Homogeneous Ge x C 1-x antireflective films were deposited on ZnS substrates. The design results show that Ge x C 1-x have high efficiency in a narrow band as homogeneous antireflective and protective films; and in a wide band as inhomogeneous antireflective and protective films. With the increase of film thickness, the transmittance curve of homogeneous antireflective films becomes very oscillatory, while the transmittance curve of inhomogeneous antireflective films becomes relatively smooth and extended along long wavelength. The experiment results show that the transmittance of ZnS coated with homogeneous antireflective Ge x C 1-x films can reach 90.4% (8~11.5μm), 16.5% higher in transmittance than uncoated ZnS sample with 73.9% in transmittance.

关 键 词：薄膜 射频磁控反溅射 红外增透保护膜系 

分 类 号：TN213[电子电信—物理电子学]