ZnO:Ag薄膜的制备及其光学性能研究  

Study on preparation and optical properties of ZnO:Ag thin films

作　　者：朱慧群[1] 黄洁芳[1] 

机构地区：[1]五邑大学应用物理与材料学院,广东江门529020

出　　处：《电子元件与材料》2012年第8期22-24,共3页Electronic Components And Materials

基　　金：广东省自然科学基金资助项目(No.10152902001000025);广东省科技计划资助项目(No.2009B010800012);江门市自然科学和基础科学领域科技攻关计划资助项目(No.江科[2009]38号);五邑大学重点科研项目资助

摘　　要：采用蒸镀与氧化二步法,以高纯混合金属Zn：Ag作蒸发源,在石英衬底上沉积Zn：Ag金属薄膜,经不同热氧化处理生长Ag掺杂ZnO薄膜。结果显示,以Ag含量为质量分数3%的蒸发源沉积的Zn：Ag薄膜经500℃氧化后,生成的ZnO：Ag薄膜在380 nm附近出现很强的近带边紫外发光峰,在438~470 nm附近出现较弱的深能级缺陷发光峰,该薄膜在360 nm有接近垂直的吸收边,其载流子浓度为1.810×1021cm–3,表现出p型导电特性和较好的光学质量。Ag-doped ZnO thin films were grown on SiO2 substrates using Zn：Ag mixed metal as the evaporation source by thermal evaporation combing post thermal oxidation. The ZnO：Ag thin film which was prepared by Zn：Ag （w（Ag）=3%） metal thin film annealed at 500 ℃shows very strong near band-edge UV emission peak at 380 nm and some weak deep level defect irradiance peaks at 438-470 nm. The absorption spectrum of the film possesses a near-vertical absorption edge at 360 nm, and its carrier concentration is 1.810×10^21 cm^-3. The ZnO：Ag thin film successfully becomes p-type conductivity in ZnO and exhibits good optical properties.

关 键 词：AG掺杂 ZNO 热蒸发 光学性能 

分 类 号：O472.3[理学—半导体物理] TB383[理学—物理]