A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications  

作　　者：张君宇 王永 刘璟 张满红 许中广 霍宗亮 刘明 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2012年第8期67-70,共4页半导体学报（英文版）

基　　金：Project supported by the National Basic Research Program of China(Nos.2010CB934204,2011CBA00600);the National Natural Science Foundation of China(Nos.60825403,60676008,60676061);the Hi-Tech Research and Development Program of China(Nos. 2008AA031403,2009AA03Z306)

摘　　要：We introduce a novel 2 T P-channel nano-crystal memory structure for low power and high speed embedded non-volatile memory（NVM） applications.By using the band-to-band tunneling-induced hot-electron （BTBTIHE） injection scheme,both high-speed and low power programming can be achieved at the same time. Due to the use of a select transistor,the ＂erased states＂ can be set to below 0 V,so that the periphery HV circuit （high-voltage generating and management） and read-out circuit can be simplified.Good memory cell performance has also been achieved,including a fast program/erase（P/E） speed（a 1.15 V memory window under 10μs program pulse）,an excellent data retention（only 20%charge loss for 10 years）.The data shows that the device has strong potential for future embedded NVM applications.We introduce a novel 2 T P-channel nano-crystal memory structure for low power and high speed embedded non-volatile memory（NVM） applications.By using the band-to-band tunneling-induced hot-electron （BTBTIHE） injection scheme,both high-speed and low power programming can be achieved at the same time. Due to the use of a select transistor,the ＂erased states＂ can be set to below 0 V,so that the periphery HV circuit （high-voltage generating and management） and read-out circuit can be simplified.Good memory cell performance has also been achieved,including a fast program/erase（P/E） speed（a 1.15 V memory window under 10μs program pulse）,an excellent data retention（only 20%charge loss for 10 years）.The data shows that the device has strong potential for future embedded NVM applications.

关 键 词：P-CHANNEL select transistor nano-crystal memory EMBEDDED 

分 类 号：TP368.1[自动化与计算机技术—计算机系统结构] TP333.1[自动化与计算机技术—计算机科学与技术]