P-CHANNEL

作品数：36被引量：21H指数：2
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相关领域：电子电信更多>>
相关作者：潘立阳曾莹刘楷刘志宏朱钧更多>>
相关机构：清华大学电子科技大学中国科学院微电子研究所更多>>
相关期刊：《Chinese Physics B》《International Journal of Smart and Nano Materials》《Chinese Physics Letters》《Semiconductor Photonics and Technology》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划更多>>
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Substrate bias effects in p-channel GaN-on-Si transistors
《Science China(Information Sciences)》2025年第1期401-402,共2页Mengyao ZHAO Jie MA Lanlan YANG Chuanqi PAN Denggui WANG Jianjun ZHOU Sheng LI Jiaxing WEI Long ZHANG Siyang LIU Weifeng SUN 
supported by National Key R&D Program of China(Grant No.2023YFB4403700);National Natural Science Foundation of China(Grant No.62274032);Fundamental Research Funds for Central Universities(Grant No.2242022R40010);Natural Science Foundation of Jiangsu Province(Grant Nos.BK20231150,BK20232006);Distinguished Young Scientists Foundation of Jiangsu Province(Grant No.BK20230025);Technological Achievements of Jiangsu Province(Grant No.BA2022005);Key Research Program of Jiangsu Province(Grant No.BE2022058-3).
The drain current(ID)of the n-channel GaN field-effecttransistor(n-FET)is influenced by the substrate-to-source bias voltage(VBS)(substrate bias effect)[1].Actually,nonzero VBS is also likely to occur in p-FET in real...
关键词：CHANNEL DRAIN GAN 
Investigation of performance-enhanced GaN-based E-mode pchannel MOSFET with pre-ohmic-annealing treatment
《Journal of Semiconductors》2024年第11期63-68,共6页Huake Su Tao Zhang Shengrui Xu Hongchang Tao Yibo Wang Yuan Gao Yue Hao Jincheng Zhang 
supported by the National Natural Science Foundation of China(62104185);the National Science Fund for Distinguished Young Scholars(61925404);the Fundamental Research Funds for the Central Universities;the Innovation Fund of Xidian University;the Wuhu and Xidian University Special Fund for Industry-University-Research Cooperation(XWYCXY-012021010)。
Pre-ohmic-annealing(POA)treatment of P-GaN/AlN/AlGaN epitaxy under N_(2)atmosphere was demonstrated to effectively achieve good p-type ohmic contact as well as decreased epitaxy sheet resistance.Ohmic contact resistan...
关键词：POA treatment GaN P-CHANNEL E-Mode barrier height surface states 
First demonstration of a self-aligned p-channel GaN back gate injection transistor
《Journal of Semiconductors》2024年第11期69-73,共5页Yingjie Wang Sen Huang Qimeng Jiang Jiaolong Liu Xinhua Wang Wen Liu Liu Wang Jingyuan Shi Jie Fan Xinguo Gao Haibo Yin Ke Wei Xinyu Liu 
supported in part by the National Key Research and Development Program of China under Grant2022YFB3604400;in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS);in part by CAS-Croucher Funding Scheme under Grant CAS22801;in part by National Natural Science Foundation of China under Grant 62334012,Grant 62074161,Grant 62004213,Grant U20A20208;Grant 62304252;in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018;in part by the University of CAS;in part by IMECAS-HKUST-Joint Laboratory of Microelectronics。
In this study,we present the development of self-aligned p-channel Ga N back gate injection transistors(SA-BGITs)that exhibit a high ON-state current.This achievement is primarily attributed to the conductivity modula...
关键词：GAN p-FETs SELF-ALIGNMENT back gate threshold hysteresis conductivity modulation 
Demonstration of normally-off p-channel GaN transistor with high threshold voltage and low subthreshold swing based on single p-GaN被引量：1
《Science China(Information Sciences)》2024年第9期344-345,共2页Yangfeng LI Zian DONG Shuai CHEN Qin WANG Tong LI Shulin CHEN Kun ZHENG Jie ZHANG Guojian DING Yang WANG Haiqiang JIA Rong YANG Lei LIAO 
supported by Hunan Provincial Natural Science Foundation of China(Grant No.2024JJ6157);Natural Science Foundation of Changsha(Grant No.kq2208213);National Natural Science Foundation of China(Grant No.62122084);Education Department of Hunan Province(Grant No.22B0020);Synergetic Extreme Condition User Facility(Grant No.2024-SECUF-PT-001871);Fundamental Research Funds for the Central Universities(Grant No.531118010804)。
GaN outperforms silicon in applications with high power and high frequency owing to the high critical electric field and high electron mobility.However,the hole-based GaN transistors which are pivotal to the GaN-based...
关键词：channel GAN TRANSISTOR 
Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure被引量：1
《Chinese Physics B》2021年第8期480-484,共5页Ruo-Han Li Wu-Xiong Fei Rui Tang Zhao-Xi Wu Chao Duan Tao Zhang Dan Zhu Wei-Hang Zhang Sheng-Lei Zhao Jin-Cheng Zhang Yue Hao 
Project supported by the Key-Area Research and Development Program of Guangdong Province,China(Grant Nos.2020B010174001 and 2020B010171002);the Ningbo Science and Technology Innovation Program 2025(Grant No.2019B10123);the National Natural Science Foundation of China(Grant No.62074122).
The threshold voltage(V_(th))of the p-channel metal-oxide-semiconductor field-effect transistors(MOSFETs)is investigated via Silvaco-Atlas simulations.The main factors which influence the threshold voltage of p-channe...
关键词：p-channel GaN MOSFETs enhancement mode(E-mode) threshold voltage 
Reliability evaluation on sense-switch p-channel flash被引量：4
《Journal of Semiconductors》2021年第8期82-86,共5页Side Song Guozhu Liu Hailiang Zhang Lichao Chao Jinghe Wei Wei Zhao Genshen Hong Qi He 
In this paper,the reliability of sense-switch p-channel flash is evaluated extensively.The endurance result indicates that the p-channel flash could be programmed and erased for more than 10000 cycles;the room tempera...
关键词：RELIABILITY ENDURANCE data retention sense-switch p-channel flash 
High mobility germanium-on-insulator p-channel FinFETs
《Science China(Information Sciences)》2021年第4期237-238,共2页Huan LIU Genquan HAN Jiuren ZHOU Yan LIU Yue HAO 
supported by National Key Research and Development Project(Grant Nos.2018YFB2200500,2018YFB2202800);National Natural Science Foundation of China(Grant Nos.61534004,61604112,61622405,61874081,61851406)。
Dear editor,Over the past decade,germanium has attracted great interest as a promising channel material for p-channel metal oxide semiconductor field-effect-transistor(MOSFET),owing to its higher hole mobility over Si...
关键词：CHANNEL MOBILITY TRANSISTOR 
Impact of self-heating effects on nanoscale Ge p-channel Fin FETs with Si substrate被引量：4
《Science China(Information Sciences)》2018年第6期169-177,共9页Longxiang YIN Lei SHEN Hai JIANG Gang DU Xiaoyan LIU 
supported by National Natural Science Foundation of China(Grant Nos.61404005,61674008,61421005);National High Technology Research and Development Program of China(863)(Grant No.2015AA016501)
In this paper, self-heating effects（SHE） in nanoscale Ge p-channel Fin FETs with Si substrate are evaluated by TCAD simulation. Hydrodynamic transport with modified mobilities and Fourier′s law of heat conduction w...
关键词：GERMANIUM Fin FET self-heating effect thermal resistance TCAD 
High-performance heterogeneous complementary inverters based on n-channel MoS2 and p-channel SWCNT transistors被引量：1
《Nano Research》2017年第1期276-283,共8页Zhixin Li Dan Xie Ruixuan Dai Jianlong Xu Yilin Sun Mengxing Sun Cheng Zhang Xian Li 
Acknowledgements This work was supported by the National Natural Science Foundation of China （Nos. 51672154, 51372130, and 61401251）, Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics （No. KF201517）, and Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices （No. KFJJ201402）.
Heterogeneous complementary inverters composed of bi-layer molybdenum disulfide （MoS2） and single-walled carbon-nanotube （SWCNT） networks are designed, and n-type MoS2/p-type SWCNT inverters are fabricated with a ...
关键词：heterogeneous inverter MOS2 single-walledcarbon-nanotube （SWCNT） high voltage gain electrical properties 
A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer被引量：1
《Chinese Physics B》2017年第1期466-470,共5页Wei Li Zhi Zheng Zhigang Wang Ping Li Xiaojun Fu Zhengrong He Fan Liu Feng Yang Fan Xiang Luncai Liu 
supported by the National Natural Science Foundation of China(Grant No.61404110);the National Higher-Education Institution General Research and Development Project,China(Grant No.2682014CX097)
A novel structure is proposed for doubling the vertical breakdown voltage of silicon-on-insulator（SOI） devices. In this new structure, the conventional buried oxide（BOX） in an SOI device is split into two sections...
关键词：breakdown voltage（BV） silicon-on-insulator（SOI） buried oxide（BOX） P channel 
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