Demonstration of normally-off p-channel GaN transistor with high threshold voltage and low subthreshold swing based on single p-GaN  

作　　者：Yangfeng LI Zian DONG Shuai CHEN Qin WANG Tong LI Shulin CHEN Kun ZHENG Jie ZHANG Guojian DING Yang WANG Haiqiang JIA Rong YANG Lei LIAO 

机构地区：[1]Changsha Semiconductor Technology and Application Innovation Research Institute,College of Semiconductors(College of Integrated Circuits),Hunan University,Changsha 410082,China [2]Hunan San’an Semiconductor Co.,Ltd.,Changsha 410000,China [3]Songshan Lake Materials Laboratory,Dongguan 523808,China

出　　处：《Science China(Information Sciences)》2024年第9期344-345,共2页中国科学（信息科学）（英文版）

基　　金：supported by Hunan Provincial Natural Science Foundation of China(Grant No.2024JJ6157);Natural Science Foundation of Changsha(Grant No.kq2208213);National Natural Science Foundation of China(Grant No.62122084);Education Department of Hunan Province(Grant No.22B0020);Synergetic Extreme Condition User Facility(Grant No.2024-SECUF-PT-001871);Fundamental Research Funds for the Central Universities(Grant No.531118010804)。

摘　　要：GaN outperforms silicon in applications with high power and high frequency owing to the high critical electric field and high electron mobility.However,the hole-based GaN transistors which are pivotal to the GaN-based CMOS circuits and high-side switching are still under investigation.Two-dimensional hole gas(2DHG)has been used to demonstrate the p-channel GaN field-effect-transistors(FETs)[1-5].

关 键 词：channel GAN TRANSISTOR 

分 类 号：TN386[电子电信—物理电子学]