Investigation of performance-enhanced GaN-based E-mode pchannel MOSFET with pre-ohmic-annealing treatment  

作　　者：Huake Su Tao Zhang Shengrui Xu Hongchang Tao Yibo Wang Yuan Gao Yue Hao Jincheng Zhang 

机构地区：[1]State Key Laboratory of Wide-bandgap Semiconductor Devices and Integrated Technology,School of Microelectronics,Xidian University,Xi’an 710071,China [2]Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences,Suzhou 215123,China

出　　处：《Journal of Semiconductors》2024年第11期63-68,共6页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(62104185);the National Science Fund for Distinguished Young Scholars(61925404);the Fundamental Research Funds for the Central Universities;the Innovation Fund of Xidian University;the Wuhu and Xidian University Special Fund for Industry-University-Research Cooperation(XWYCXY-012021010)。

摘　　要：Pre-ohmic-annealing(POA)treatment of P-GaN/AlN/AlGaN epitaxy under N_(2)atmosphere was demonstrated to effectively achieve good p-type ohmic contact as well as decreased epitaxy sheet resistance.Ohmic contact resistance(Rc)extracted by transfer length method reduced from 38 to 23Ω·mm with alleviated contact barrier height from 0.55 to 0.51 eV after POA treatment.X-ray photoelectron spectroscopy and Hall measurement confirmed that POA treatment was able to reduce surface state density and improve the hole concentration of p-GaN.Due to the decreased Rc and improved two-dimensional hole gas(2DHG)density,an outstanding-performance GaN E-mode p-channel MOSFET was successfully realized.

关 键 词：POA treatment GaN P-CHANNEL E-Mode barrier height surface states 

分 类 号：TN386[电子电信—物理电子学]