High mobility germanium-on-insulator p-channel FinFETs  

作　　者：Huan LIU Genquan HAN Jiuren ZHOU Yan LIU Yue HAO 

机构地区：[1]State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi'an 710071,China

出　　处：《Science China(Information Sciences)》2021年第4期237-238,共2页中国科学（信息科学）（英文版）

基　　金：supported by National Key Research and Development Project(Grant Nos.2018YFB2200500,2018YFB2202800);National Natural Science Foundation of China(Grant Nos.61534004,61604112,61622405,61874081,61851406)。

摘　　要：Dear editor,Over the past decade,germanium has attracted great interest as a promising channel material for p-channel metal oxide semiconductor field-effect-transistor(MOSFET),owing to its higher hole mobility over Si[1].

关 键 词：CHANNEL MOBILITY TRANSISTOR 

分 类 号：TN386[电子电信—物理电子学]