Degradation of the transconductance of a gate-modulated generation current in nMOSFET  

作　　者：陈海峰 过立新 杜慧敏 

机构地区：[1]School of Electronic Engineering,Xi'an University of Posts and Telecommunications

出　　处：《Chinese Physics B》2012年第8期564-569,共6页中国物理B（英文版）

基　　金：Project supported by the Shaanxi Provincial Research Project of Education Department,China (Grant No. 11JK0902);the Xi’an Municipal Applied Materials Innovation Fund,China (Grant No. XA-AM-201012)

摘　　要：The degradation of transconductance （G） of a gate-modulated generation current IGD in a LDD nMOSFET is investigated. The G curve shifts rightward under the single electron-injection-stress （EIS）. The trapped electrons located in the gate oxide over the LDD region （QL） makes the effective drain voltage diminish. Accordingly, the G peak in depletion （GMD） and that in weak inversion （GMw） decrease. It is found that △GMD and △GMw each have a linear relationship with the n-th power of stress time （tn） in a dual-log coordinate： △GMD octn, AGMD octn （n = 0.25）. During the alternate stress, the injected holes neutralize QL induced by the previous EIS. This neutralization makes the effective VD restore to the initial value and then the IGD peak recovers completely. Yet the threshold voltage recovery is incomplete due to the trapped electron located over the channel （Qc）. As a result, GMW only recovers to circa 50% of the initial value after the hole-injection-stress （HIS）. Instead, GMD almost recovers. The relevant mechanisms are given in detail.The degradation of transconductance （G） of a gate-modulated generation current IGD in a LDD nMOSFET is investigated. The G curve shifts rightward under the single electron-injection-stress （EIS）. The trapped electrons located in the gate oxide over the LDD region （QL） makes the effective drain voltage diminish. Accordingly, the G peak in depletion （GMD） and that in weak inversion （GMw） decrease. It is found that △GMD and △GMw each have a linear relationship with the n-th power of stress time （tn） in a dual-log coordinate： △GMD octn, AGMD octn （n = 0.25）. During the alternate stress, the injected holes neutralize QL induced by the previous EIS. This neutralization makes the effective VD restore to the initial value and then the IGD peak recovers completely. Yet the threshold voltage recovery is incomplete due to the trapped electron located over the channel （Qc）. As a result, GMW only recovers to circa 50% of the initial value after the hole-injection-stress （HIS）. Instead, GMD almost recovers. The relevant mechanisms are given in detail.

关 键 词：generation current TRANSCONDUCTANCE electron injection alternate stress DEGRADATION 

分 类 号：TN386.1[电子电信—物理电子学] TN386