一种可快速关断的新型横向绝缘栅双极晶体管  

A Novel High Speed Lateral Insulated Gate Bipolar Transistor

作　　者：胡浩[1] 陈星弼[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《微电子学》2012年第4期565-568,共4页Microelectronics

摘　　要：提出了一种可快速关断的新型横向绝缘栅双极晶体管(LIGBT)。在LIGBT关断时,利用一个集成的PMOS晶体管来短路发射结,以获得短的关断时间。PMOS晶体管由LIGBT驱动,不需要外部驱动电路。新器件在没有带来任何副作用(如snap-back现象和工艺制造上的困难)的情况下,获得了低的导通压降和快的关断速度。数值仿真结果表明,新器件在不增加导通压降的同时,将关断时间从120ns降到12ns。A novel lateral IGBT with a second gate on emitter portion was presented. A PMOS transistor, driven by the proposed device itself, was used to short the PN junction at the emitter when the LIGBT turned off. Low on-state voltage and fast turn-off speed were achieved without any bad effect, such as snapback I-V characteristics or any difficulty in processing complexity. Results from numerical simulation showed that the novel circuit reduced turn-off time from 120 ns to 12 ns without increasing on-state voltage.

关 键 词：横向绝缘栅双极晶体管 横向器件 快速关断 

分 类 号：TN303[电子电信—物理电子学]