平面型VRM消除直流偏磁集成磁件研究  

Elimination of DC-bias integrated magnetics with planar VRM

作　　者：李雅梅[1] 陈明霞[1] 杜晶[1] 

机构地区：[1]辽宁工程技术大学电气与控制工程学院,辽宁葫芦岛125105

出　　处：《电源技术》2012年第8期1174-1177,共4页Chinese Journal of Power Sources

基　　金：国家自然科学基金(50874059)

摘　　要：为消除四相电压调整模块(VRM)的直流偏磁和提高其动态响应速度,提出利用"场"、"路"结合的方法,在此基础上阐述了集成磁件消除直流偏磁的原理并且部分集成磁件设计了薄膜化。电路仿真和电磁场有限元仿真分析验证表明,集成磁件的直流偏磁得以消除,交错变换器的动态响应得到了改善。To eliminate the four-phase voltage regulator modules （VRM） of the DC bias and improve the dynamic response speed, the combination method of ＂field＂ and ＂road＂ was proposed. The principle of integrated magnetics to eliminate DC bias was elaborated, and part of the integrated magnetics had the thin-film design. The circuit simulation and the finite element simulation show that the DC bias of integrated magnetics is eliminated, and the dynamic response of interleaved converter is improved.

关 键 词：直流偏磁 动态响应 平面集成磁件 薄膜化 交错变换器 

分 类 号：TM46[电气工程—电器]