硅基大位移低驱动电压静电微驱动器变形分析  

Analysis of the Si micro actuator with large displacement and low voltage

作　　者：田文超[1] 贾建援[1] 

机构地区：[1]西安电子科技大学机电工程学院,陕西西安710071

出　　处：《西安电子科技大学学报》2012年第4期109-113,共5页Journal of Xidian University

基　　金：国家自然科学基金资助项目(61176130);教育部基本科研业务费资助项目(JY10000904016)

摘　　要：针对目前横向加载单向变形静电微驱动器存在的位移过小或驱动电压过大的问题,提出一种基于纵横弯曲变形原理的硅基大位移低电压静电微驱动器模型,将弹性力由传统意义的恢复力改变为驱动力,推导出微驱动器挠度变形的控制方程.通过仿真发现,该驱动器的驱动位移高达145μm,远大于目前微驱动器的变形量;驱动电压仅为5V,远低于目前微驱动器的驱动电压值.The development trend of the micro actuator is the large-displacement, low-voltage and fast response. At present, the main drive mode of the micro actuator is the electrostatic transverse loading. However, its drive voltage is too high and deformation is too small. The model of a micro actuator with large displacement low voltage is presented based on the principle of the vertically-horizontally bending. The elastic force is transformed from the restoring force to the driving force. The deflection equation of the micro beam is derived. Simulation shows that the displacement is as large as 145μm and the driving voltage is as low as 5 V. The displacement and driving voltage are superior to those of the current micro actuator.

关 键 词：微电子机械系统 微驱动器 纵横弯曲 挠度方程 

分 类 号：TH73[机械工程—仪器科学与技术]