影响区熔硅单晶电阻率均匀性的主要因素  

The Main Factors of the Impact Zone Melting Silicon Single Crystal Resistivity Uniformity

作　　者：刘洪[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2012年第8期4-6,共3页Equipment for Electronic Products Manufacturing

摘　　要：通过对弯曲的结晶界面的研究,分析其对分凝系数、分凝方向及界面杂质分布的影响;通过改变拉晶参数以改变结晶界面的弯曲程度,减小分凝系数的变化及径向分凝的强度。分析影响电阻率均匀性的主要因素,改变其生产工艺。In this paper, the study of the curved crystal interface. Analyze its impact on the segregation coefficient and direction of segregation on the interface impurity distribution. By changing the pulling parameter changes the degree of bending of the crystal interface, Changes reduce the segregation coefficient and radial segregation strength. Analysis of the main factors to affect the uniformity of the resistivity, change the production process.

关 键 词：FZ单晶 结晶界面 径向分凝 

分 类 号：TN304.1[电子电信—物理电子学]