离子注入辣椒出苗特性的研究  

Research on Germination Characteristics of Pepper after Ion Implantation

作　　者：蔡长龙[1] 梁海锋[1] 马睿[1] 严一心[1] 

机构地区：[1]西安工业大学离子束生物工程与生物多样性研究中心,陕西西安710032

出　　处：《种子》2012年第8期49-51,共3页Seed

基　　金：陕西省教育厅专项科研计划项目(编号:12 JK 0838);陕西省科学技术研究发展计划项目(编号:2012 K 08-05)

摘　　要：采用生物改性离子注入设备对辣椒干种子进行了N+离子注入,详细进行了干种子注入N+离子后的育种和生长特性研究,主要研究了N+离子注入后辣椒种子的出苗率、出苗时间与N+离子注入工艺参数之间的关系,通过研究,获得了致死率为50%的离子注入工艺参数,同时,得到了离子能量和注入剂量相关的致死临界曲线,该致死临界曲线类似于反比例曲线。研究表明,致死临界曲线上任一点的离子能量和注入剂量之积在2×1017keV.ions/mm2-2.5×1017keV.ions/mm2范围内,即当离子能量与注入剂量之积大于2.5×1017keV.ions/mm2时,种子全部致死,当离子能量与注入剂量之积小于2×1017keV.ions/mm2时,将有一定比例的种子存活。In this paper,the N ^＋ was implanted into the dry seeds of pepper using the biological modified ion implantation equipment, the breeding and growth characteristics of dry seeds after N ^＋ ion implantation were researched in detail, and the relationships between germination rate, germination time of pepper seed and ion implantation process parameters were mainly studied. Through research, the ion implantation process parameters for 50% death rate were obtained, and at the same time, the death critical curve related the ion energy and dose was obtained, which was similar to the inverse proportion curve. The results showed that the product of ion energy and dose of point on the death critical curve is from 2 × 10^17keV · ions/mm^2 to 2.5 × 10^17keV · ions/ mm^2, that is to say, all seeds is deadly when the products of ion energy and dose is greater than 2.5 × 1017keV · ions/mm^2, and a certain ratio seeds will live when the products of ion energy and dose is less than 2 × 10^17 keV · ions/mm^2.

关 键 词：离子注入 辣椒 生长特性 致死临界曲线 

分 类 号：S335[农业科学—作物遗传育种] S641.3[农业科学—农艺学]