放电过程对碳纳米管膜场发射性能的影响(英文)  

Effect of Discharge Process on Field Emission Properties of Carbon Nanotubes Film

作　　者：樊志琴[1] 李瑞[1] 蔡根旺[1] 张君德[1] 王建星[1] 

机构地区：[1]河南工业大学理学院,郑州450001

出　　处：《人工晶体学报》2012年第4期1102-1106,共5页Journal of Synthetic Crystals

摘　　要：利用微波等离子体化学气相沉积(MPCVD)方法,在不锈钢衬底上直接沉积碳纳米管膜。研究碳纳米管膜在放电过程中对其场发射性能的影响。通过XPS、Raman光谱等手段,分析碳纳米管膜在放电过程中sp2碳和sp3碳含量的变化,对碳纳米管膜场发射性能变化的根源进行研究。结果显示,在放电过程中,碳纳米管膜中sp2碳的含量减少,场发射性能变差。经过分析,我们认为发生这种现象的原因是:发射电子主要是从sp2碳发出的,sp2碳的减少直接影响了发射电子的减少,故其场发射性能降低。Carbon nanotubes （CNTs） films were synthesized from methane and hydrogen gas mixture directly on stainless steel plates by microwave plasma chemical vapor deposition （MPCVD）. The effect of arc discharge process on the field emission stability of carbon nanotubes films was studied. The ratio of the sp2 over sp3 carbon-carbon bond of CNTs film by XPS and Raman spectra was analyzed to study field emission properties of the films. The results show that field emission property degraded while the sp2 carbon-carbon bond was decreased due to arc discharge. It could be considered that the electrons were mainly emitted from sp2 bonded carbon, so the decreasing of sp2 fraction of the film meant the decreasing of emission site density, and resulted in the degradation behavior of electron emission

关 键 词：碳纳米管 MPCVD 场发射 拉曼光谱 

分 类 号：O462.4[理学—电子物理学]