SOI NLIGBT热载流子效应研究  

Research of Hot-carrier-induced Degradation on SOI NLIGBT

作　　者：张炜[1] 张世峰[1] 韩雁[1] 吴焕挺[1] 

机构地区：[1]浙江大学微电子与光电子研究所,杭州310027

出　　处：《固体电子学研究与进展》2012年第4期309-313,317,共6页Research & Progress of SSE

摘　　要：SOI NLIGBT中热载流子效应分别通过直流电压的应力测试、TCAD仿真和电荷泵测试三种方法进行了研究。其中,不同直流电压应力条件下测得的衬底电流Isub和导通电阻Ron用来评估因热载流子效应引起的器件退化程度。为了进行理论分析,对器件内部的电场强度和碰撞离化率也进行了仿真。测试得到的电荷泵电流直接验证了器件表面的损伤程度。最后讨论了SOI LIGBT在不同栅压条件下的退化机制。The hot-carrier-induced （HCI） degradations on SOI NLIGBT are investigated by DC voltage stress experiment, TCAD simulation and charge pumping test. The HCI effect on device performance is assessed by measuring the substrate current Isub and on-state resistance Ron at different voltage stress conditions. The electric field and impact ionization rate are simulated to obtain better physical insights. And the front-gate interface state density can be determined directly by measuring charge pumping current. Finally, the degradation mechanisms under different gate voltage stress conditions are presented.

关 键 词：绝缘体上硅的N型横向绝缘栅双极晶体管 热载流子效应 碰撞离化率 电荷泵 界面态 氧化层陷阱空穴 

分 类 号：TN386.2[电子电信—物理电子学]