基于SIFT技术的集成电路失效缺陷分析  

IC Failure Defect Analysis Based on SIFT Technology

作　　者：刘迪[1] 顾晓峰[1] 陆坚[2] 梁海莲[1] 

机构地区：[1]轻工过程先进控制教育部重点实验室,江南大学电子工程系,江苏无锡214122 [2]中国电子科技集团公司第58研究所,江苏无锡214035

出　　处：《固体电子学研究与进展》2012年第4期336-340,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(11074280);中央高校基本科研业务费专项资金资助项目(JUSRP20914,JUDCF1003);江苏省普通高校研究生创新计划资助项目(CXLX11-0486)

摘　　要：激励源诱导故障测试(SIFT)是一种新型的失效定位技术,可用于集成电路和分立器件中漏电、击穿、短路等失效点的定位及失效机理的分析。在介绍SIFT技术工作原理的基础上,利用该技术进行了六反相器电路的深埋层缺陷、收发器电路中电源与地之间漏电流失效和串行输出模数转换电路MOS器件欧姆短路的定位,并结合微结构观测分析了失效原因。研究结果表明,SIFT技术能有效分析光发射显微镜(EMMI)和激光光束诱导阻抗变化测试(OBIRCH)技术较难定位的缺陷,弥补了这些常规失效分析技术的不足。SIFT is a new failure location technology which can be widely applied in locating leakage, breakdown and short-circuit failures and analyzing the failure mechanism in integrated circuits and discrete devices. After introducing the working principle of SIFT, this technology is used to locate the buried layer defect in hex inverter, the leakage current failure between VDD and GND in transceiver, and the short-circuit failure of MOS device in serial output ADC. The failure reasons are also clarified by combining with the microstructure analysis. The research re- suits indicate that the SIFT technology is an effective tool to analyze defects which may be diffi- cult to he located by EMMI and OBIRCH, making up the deficiency of these routine failure analy- sis methods.

关 键 词：激励源诱导故障测试 失效分析 失效定位 光发射显微镜 激光光束诱导阻抗变化测试 

分 类 号：TN406[电子电信—微电子学与固体电子学]