高效率开关F_3/E类功率放大器  

High Efficiency Switching-Mode Class F_3/E Power Amplifier

作　　者：曹韬[1] 吕立明[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《半导体技术》2012年第9期715-719,共5页Semiconductor Technology

摘　　要：介绍了一种高效F3/E类功率放大器的设计方法,该放大器将F类功率放大器的谐波控制电路引入逆E类功率放大器的负载网络,以改善放大器性能。此电路结构提升了放大器的功率输出能力,降低了电路对功率放大器管器件漏极耐压特性的要求,增强了器件工作时的安全性。详细阐述了该放大器的设计过程,并给出了负载网络各器件的最佳设计取值方程。选用GaNHEMT器件研制了S频段F3/E类功率放大器测试电路。实测结果表明该放大器在驱动功率为27 dBm时,可获得40.3 dBm的输出功率,具有13.3 dB增益,工作效率高达78.1%,功率附加效率为75.2%。实测结果与仿真结果吻合,验证了设计方法的正确性。The design methodology of high efficiency class F3/E power amplifire was presented.The proposed amplifier topology was similar to a hybrid of class F and inverse class E.This configuration brings in higher power output capability,relaxes the design requirement on the transistor and is greatly beneficial to the device safe.The principles and design equations required to calculate the optimum circuit component values were given in detail.The results show that when driving power is 27 dBm,the S band amplifier test circuits with GaN HEMT device deliver 40.3 dBm output power and exhibit 13.3 dB power gain with drain efficiency of 78.1% and PAE of 75.2%.Comparisons of simulated and experimental results were offered with good agreement,which confirmed accuracy of design methodology.

关 键 词：E类功率放大器 F类功率放大器 高效率 GAN 谐波抑制 

分 类 号：TN722.75[电子电信—电路与系统]