Tuning an rf-SQUID flux qubit system’s potential with magnetic flux bias  

作　　者：花涛 许伟伟 史建新 安德越 孙国柱 于扬 吴培亨 

机构地区：[1]Research Institute of Superconductor Electronics,School of Electronic Science and Engineering,Nanjing University [2]National Laboratory of Solid State Microstructures,School of Physics,Nanjing University

出　　处：《Chinese Physics B》2012年第9期559-564,共6页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00107 and 2011CBA00202);the National Natural Science Foundation of China (Grant Nos. 61027008 and 11074114)

摘　　要：At an extremely low temperature of 20 inK, we measured the loop current in a tunable rf superconducting quantum interference device （SQUID） with a dc-SQUID. By adjusting the magnetic flux applied to the rf-SQUID loop （Фf） and the small dc-SQUID （Фfcjj）, respectively, the potential shape of the system can be fully controlled in situ. Variation in the transition step and overlap size in the switching current with a barrier flux bias are analyzed, from which we can obtain some relevant device parameters and build a model to explain the experimental phenomenon.At an extremely low temperature of 20 inK, we measured the loop current in a tunable rf superconducting quantum interference device （SQUID） with a dc-SQUID. By adjusting the magnetic flux applied to the rf-SQUID loop （Фf） and the small dc-SQUID （Фfcjj）, respectively, the potential shape of the system can be fully controlled in situ. Variation in the transition step and overlap size in the switching current with a barrier flux bias are analyzed, from which we can obtain some relevant device parameters and build a model to explain the experimental phenomenon.

关 键 词：RF-SQUID POTENTIAL flux qubit 

分 类 号：TN304.21[电子电信—物理电子学]