硅基650nm增强型光电探测器  

Design of a Si-based 650 nm Enhanced Photodetector

作　　者：黄烈云[1] 向勇军[1] 孙诗[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2012年第4期483-485,共3页Semiconductor Optoelectronics

摘　　要：通过在硅PIN结构的基础上进行改进,采用硅P+PIN结构,研制出650nm增强型光电探测器。详细介绍了器件结构设计和制作工艺。对器件响应度、暗电流和响应速度等参数进行计算与分析。实验结果表明,器件响应度达0.448A/W(λ=650nm),暗电流达到0.1nA(VR=10V),上升时间达到3.2ns。By optimizing traditional PIN structure, a Si-based 650 nm enhanced photodetector was fabricated with P＋ PIN structure. The structural design and process were introduced, and the important parameters such as response time, dark current and responsivity were computed and analyzed. Test results show that the responsivity, dark current and the risetime reach 0.448 A/W （2=650 nm）, 0.1 nA （VR=10 V） and 3.2 ns, respectively.

关 键 词：增强型光电探测器 PIN 响应度 

分 类 号：TN364.2[电子电信—物理电子学]