光电隔离开关抗静电放电试验失效原因分析  

Failure Analysis of Electrostatic Discharge Test for Optical Isolation Switch

作　　者：王文双[1] 唐锐[1] 牛付林[1] 

机构地区：[1]工业和信息化部电子第五研究所国家通用电子元器件质量监督检验中心,广州510610

出　　处：《半导体光电》2012年第4期498-499,532,共3页Semiconductor Optoelectronics

摘　　要：在抗静电放电(ESD)试验后通常会使用I-V特性扫描对器件是否失效进行判断。但对有些特殊电路而言,使用这种I-V特性扫描可能对电路造成电应力损伤,导致对电路是否满足ESD试验能力做出错误的判断。文章主要以光电隔离开关为例,分析了造成这种现象的原因,并提出在进行该类光电器件的ESD试验过程中不进行端口I-V特性扫描,以避免由此带来的额外损伤。I-V feature scanning is commonly used to assess the failure of electronic components after electrostatic discharge （ESD） tests, but it also may cause electrical stress damage for some special circuits, which will result in erroneous judgment for ESD tests. In this paper, taking optoelectronic isolating switch as an example, factors for this phenomenon were analyzed, and it is suggested that I-V feature scanning should be omitted so as to avoid additional damage.

关 键 词：静电放电 光电器件 人体模型 I-V特性 

分 类 号：TN36[电子电信—物理电子学]