CoTaZr薄膜的制备及结构研究  

Deposition Process and Microstructure of CoTaZr Thin Film

作　　者：王粤[1] 谢致薇[1] 杨元政[1] 周林[1] 钟焕周[1] 吴金明[1] 

机构地区：[1]广东工业大学材料与能源学院,广州510006

出　　处：《材料导报》2012年第16期91-93,116,共4页Materials Reports

基　　金：国家自然科学基金(50971046);高等学校博士学科点专项科研基金(200805620004)

摘　　要：室温下采用直流磁控溅射法在玻璃基片上沉积CoTaZr薄膜。利用EDS、SEM、XRD等方法研究溅射气压、功率对CoTaZr薄膜成分、生长形貌和组织结构的影响。结果表明,溅射功率为96W时,沉积制备的薄膜成分随Ar气压变化不大,薄膜成分基本稳定。在溅射气压为2Pa、功率为96W时,成功制备出具有非晶+纳米晶结构的CoTaZr薄膜。在2Pa时,随着功率的增大,薄膜由1区、T区向3区转变;在96W时,随着气压的增大,薄膜由3区向T区或1区转变。The CoTaZr thin films were deposited on glass substrate at room temperature by IX3 magnetron sputtering method. The effect of ar pressure and sputtering power on the composition, morphology and structure of CoTaZr thin films were investigated by means of EDS, SEM and XRD. The results show that there are no obvious effects of variations of Ar pressure on the thin film compositions at 96W. CoTaZr thin film of amorphous ＋ nanocrys- talline structure was prepared at 2Pa, 96W. At 2Pa, the microstructure of thin film gradually turns from Zone 1 or Zone T to Zone 3 with the inereasing of sputtering power. At 96W, the microstructure of thin film gradually turns from Zone 3 to Zone T or Zone 1 with the increasing of Ar pressure.

关 键 词：CoTaZr薄膜 磁控溅射 非晶纳米晶薄膜 

分 类 号：TB43[一般工业技术]