多发光区大功率激光器的热特性分析(英文)  

Thermal analysis of high power laser diodes with multiple emitters

作　　者：李静婉[1] 冯士维[1] 张光沉[1] 熊聪[1] 乔彦斌[1] 郭春生[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《红外与激光工程》2012年第8期2027-2032,共6页Infrared and Laser Engineering

基　　金：北京市自然科学基金(4092005);国家863计划(2009AA032704)

摘　　要：通过电学温敏参数法测得多发光区大功率激光器瞬态加热响应曲线,利用结构函数法给出了多发光区激光器热阻构成,分析了多发光区激光器热特性。通过串并联热阻网络模型刻画了单发光区、两发光区、四发光区激光器的热阻构成,给出了激光器芯片热阻与发光区个数之间的定量关系。实验结果表明,不同发光区激光器的芯片级热阻随着发光区数量的增加成比例减小,而封装级热阻不变,这对激光器热设计提供了重要的参考准则。The transient temperature characteristics of high power laser diode （LD） with multiple emitters were presented and discussed in this paper. The transient temperature response curves were measured by electrical temperature sensitive parameter method. Structure function method was performed to evaluate the thermal resistance constitution for multiple emitters LD. The thermal resistance network model was adopted to characterize the thermal behavior of LDs with one, two and four emitters respectively. The experiment result shows that chip level thermal resistance of multiple emitters LD decreases in proportion to the number of emitters, while the package level thermal resistance remains unchangeable. The study provides an important reference for the thermal design of multiple emitters LD.

关 键 词：激光器 热阻 结构函数 

分 类 号：TN248.4[电子电信—物理电子学]