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作 者:董会杰[1,2] 辛忠[1] 陆馨[1] 吕宇皓[1] 王磊[3]
机构地区:[1]华东理工大学化学工程联合国家重点实验室,上海200237 [2]武汉纺织大学化学与化工学院,武汉430200 [3]华中科技大学国家光电实验室,武汉430074
出 处:《微纳电子技术》2012年第9期630-636,共7页Micronanoelectronic Technology
基 金:上海市科委纳米技术专项资助课题(0652nm001)
摘 要:纳米压印技术因其成本低、产量高的优点广受关注,而开发可适用于纳米压印的压印胶成为该工艺的关键。合成了一种硅含量高的单体三(三甲基硅氧基)甲基丙烯酰氧丙基硅烷(TRIS),制备了一种新型紫外纳米压印用含硅丙烯酸酯型压印胶,用四点弯曲实验机和接触角测试仪表征了压印胶与模板的黏附性能,研究了配方组成对模板黏附性能的影响,优化得到了抗黏附性能优异的配方。压印实验结果表明,该压印胶与模板分离时无粘连。AFM与SEM测试结果表明,压印胶上复制得到了线宽149 nm、周期298 nm、深宽比为1的纳米光栅图形,图形结构完整。Nanoimprint lithography(NIL) wins wide attention because of low costs and high throughput.The key factor of NIL is to develop new materials that are better suited as nanoimprint resists.A novel UV-based acrylate resist is prepared by tris(trimethyl siloxy) methacryloxypropylsilane(TRIS).Adhesion properties between the resist and mold were characterized by the four-point bending test and contact angle measurement.The effect of the formulation components on the antiadhesion properties with the mold was studied,and the excellent formulation with the antiadhesion performance was obtained by the optimization.The UV-nanoimprinting experiment shows that the resist is seperated with the mold without adhesion.SEM and AFM results show that transfered nanoscale pattern on the resist with 149 nm line width,298 nm periods and 1 of the depth-to-width ratio are obtained without obvious defects.
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