磁控溅射制备的AlN薄膜的结构、组分及性能分析  

The microstructure,component and properties of AlN thin films by magnetron sputtering

作　　者：席忠红[1] 李海翼[1] 

机构地区：[1]甘肃民族师范学院物理与水电工程系,合作747000

出　　处：《低温与超导》2012年第9期32-35,39,共5页Cryogenics and Superconductivity

基　　金：甘肃民族师范学院院长基金(批准号:11-15)资助

摘　　要：采用DC磁控溅射法,分别在p-Si(111)和玻璃基片上沉积AlN薄膜。利用X射线衍射(XRD)、X射线能谱仪(EDS)、原子力显微镜(AFM)、台阶仪\紫外/可见分光光度计和傅里叶变换红外光谱仪(FTIR)分析了薄膜的结构组分、表面形貌、膜厚、光学性能和红外吸收特性。结果表明:溅射电流对AlN薄膜的生成有很大的影响,当电流增加到0.40A时,薄膜中出现明显的h-AlN(100)和AlN(110)衍射峰;样品的最大高度都小于30nm;样品在250-1000nm波长范围内具有较高的透射率,当溅射电流为0.4A时,薄膜的禁带宽度约为5.94eV;在677.12cm-1处出现强烈的吸收峰。AlN thin films were prepared by DC magnetren reactive sputtering on p - Si （ 111 ） and glass substrates. The properties of structure and component, surface morphologies, thickness, optics and infrared spectra of the films were studied by using X- ray diffraction （XRD）, X- ray EDS, Atomic force microscopy （AFM）, step profilometer, UV -visible spectrophotometer and Fourier transformation infrared spectra （FTIR）. It shown that h -AlN （100）and AlN （110 ） diffraction peak was presented in the samples when the sputtering current added up to 0. 40A ; the maximum height of thin films was less than 30nm; AlN samples had high transmission in the wave length range of 250 - 1000hm, its band - gap value was 5.94eV ; an intense absorption exited at 677.12cm - 1 of wavenumber in the Fourier transformation infrared spectra when the sputtering current was 0.40A.

关 键 词：ALN薄膜 溅射电流 XRD 透射率 FTIR EDS 

分 类 号：O484.43[理学—固体物理]