电子束加热与电阻加热蒸发锆膜的结构分析  

Structure Analysis of Zirconium Films Prepared by Electron Beam Heating Evaporation and Resistance Heating Evaporation

作　　者：梁建华[1] 彭述明[1] 张晓红[1] 刘锦华[1] 周晓松[1] 龙兴贵[1] 

机构地区：[1]中国工程物理研究院核物理与化学研究所,四川绵阳621900

出　　处：《原子能科学技术》2012年第8期992-995,共4页Atomic Energy Science and Technology

基　　金：国家自然科学基金资助项目(50871106);中国工程物理研究院重大科学技术基金资助项目(2009A0301015)

摘　　要：采用XRD与SEM分析了在钼衬底上电子束加热蒸发与电阻加热蒸发制备的锆膜的结构。结果表明,电子束加热蒸发与电阻加热蒸发在钼衬底上制备的锆膜为hcp结构;电子束加热蒸发的锆膜以(002)晶面生长为主,而电阻加热蒸发的则以(101)与(002)晶面生长为主;电阻加热蒸发的锆膜晶粒呈不规则堆积,大部分尺寸约为1μm,少部分约为500nm;电子束加热蒸发的锆膜织构强烈,晶粒规则,呈六棱柱型,尺寸约为300nm。Zirconium films on Mo substrate prepared by electron beam heating evaporation（EBHE） and resistance heating evaporation（RHE） respectively were characterized by XRD and SEM.All films are HCP structure and the evidence of crystal tropism is found.（002） is the leading face in the films by EBHE,and（101）＆（002） are the leading faces in the films by RHE,respectively.The cystal particles of Zr films by RHE are in unregular arrangement and the particles size is about 500 nm rarely and 1 μm mostly,and that by EBHE are in regular hexagon arrangement and the particle size is about 300 nm.

关 键 词：蒸发 锆 薄膜 电阻加热 电子束加热 

分 类 号：TG113.11[金属学及工艺—物理冶金]