电子束蒸发沉积重掺硅薄膜及其在低辐射玻璃上的应用  

Heavily doped Si film prepared by electron beam evaporation and its application in low-e glass

作　　者：刘学丽[1] 黄延伟[1] 李向明[1] 席俊华[1] 季振国[1] 

机构地区：[1]杭州电子科技大学材料与环境工程学院,浙江杭州310018

出　　处：《功能材料》2012年第B08期39-42,共4页Journal of Functional Materials

基　　金：浙江省科技计划基金资助项目(2011C37001);浙江省自然科学基金资助项目(LQ12E02002);校级科研启动基金资助项目(KYS205611036)

摘　　要：采用电子束蒸发法以普通玻璃为基板制备了重掺硅薄膜,通过SEM、EDS、透射光谱对其形貌、成分以及透射率进行了测试表征。进一步采用铝诱导低温晶化法在玻璃基板上沉积Al薄膜,对重掺硅薄膜进行铝诱导晶化。XRD测试、电学性能测试以及可见-红外光谱透射率测试结果表明,硅薄膜在温度为300℃以上出现了Si(111)的衍射峰,薄膜的导电性得到了提高,且具有较强的红外反射能力,表明在低辐射玻璃上具有一定的应用价值。同时采用电子束蒸发法制备了结构为glass/Si/Ag/Si的Ag基低辐射玻璃,通过光学性质测试和腐蚀情况观察结果表明硅薄膜具有保护低辐射薄膜的作用。Heavily doped Si films were prepared by electron beam evaporation on conventional glass. The proper- ties, surface morphologies, composition and optical transmission, were characterized and analyzed through SEM, EDS and spectra. Furthermore, the deposited heavily doped Si films were treated by the method of A1- induced low-temperature crystallization with firstly deposited A1 film on glass substrate. The XRD measure- ment, electrical and optical properties testing results revealed that when the temperature is above 300~C, the peak Si（lll） appeared and electrical conductance increases of the Si film. Meanwhile, the crystallized Si film processes good visible light transmission, with enhanced heat reflective properties, which indicates that these Si films have potential application value in low-emissivity glass. Moreover, the Ag-based low-e glass with the structure of glass/Si/Ag/Si was prepared by electron beam evaporation and a series of testing results showed Si film can protect the low-e film in some condition.

关 键 词：电子束蒸发 重掺硅薄膜 低辐射玻璃 硅保护层 铝诱导低温晶化法 

分 类 号：O484.1[理学—固体物理]