高频小功率硅双极晶体管不同管脚端对静电放电失效的机理  

Electrostatic Discharge Failure Mechanism of Different Pin Pairs of High-frequency Small-power Silicon Bipolar Transistors

作　　者：杨洁[1] 张希军[1] 武占成[1] 

机构地区：[1]军械工程学院静电与电磁防护研究所,石家庄050003

出　　处：《高电压技术》2012年第9期2254-2258,共5页High Voltage Engineering

基　　金：国家自然科学基金(51107146;60971042)~~

摘　　要：在人体模型静电放电(electrostatic discharge,ESD)的注入作用下,部分高频小功率硅双极晶体管对人体模型静电放电最敏感的管脚端对不再是普遍认为的发射极E-基极B间的EB反偏结,而是集电极C与基极B间的CB反偏结。为此,采用微观失效分析与计算机模拟仿真分析相结合的方法,详细讨论了不同管脚对引发典型高频小功率硅双极晶体管ESD失效的效应机理,并针对典型器件内部不同位置的损伤点逐个进行分析。最终得出:高频小功率硅双极晶体管的明显失效往往是由于热二次击穿造成的基极有源区与发射极之间的熔融穿通引起的,而ESD潜在性失效发生的主要原因则是其基极或发射极金属电极附近绝缘介质的场致击穿,从而影响高频小功率硅双极晶体管使用的可靠性。Under the action of the model of human body electrostatic discharge（ESD）, most sensitive ports of some high-frequency small-power silicon bipolar transistor on model of human body ESD were not the emitter electrode to base electrode reversal junction, which was already well known to people. It was the collect electrode to base electrode reversal junction. So the further microscopic analysis and emulation analysis with computer simulation were carried on respectively. The ESD effects and failure mechanism on typical high-frequency silicon bipolar transistors which were caused by different pins were discussed in details. Each damaged point at different position inside the typical test samples was analyzed one by one. Finally it have been concluded that, when ESD was injected into the CB reversal junction, the insulation medium field induced breakdown at the edge of the base electrode or the emitter electrode of the high-frequency silicon bipolar transistors could make the field effect invalidation, besides the thermal second breakdown happened inside the Base electrode. The thermal second breakdown made the transistors failure immediately, but the field effect could make the ESD latent damage by the slight dielectric breakdown. Both of them influence the transistor＇s reliability.

关 键 词：静电放电(ESD) 失效机理 双极晶体管 管脚端对 高频 场致击穿 硅 

分 类 号：TN322.8[电子电信—物理电子学] TN03