CMOS兼容的微机械热电堆红外探测器的设计  

Design of Micromechanical Thermopile Infrared Detector Compatible with CMOS Process

作　　者：高璇[1] 郭涛[1] 欧文 明安杰 刘谨 

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室,中北大学电子科学与技术系,山西太原030051 [2]江苏物联网研究发展中心,江苏无锡214135

出　　处：《红外技术》2012年第9期535-540,共6页Infrared Technology

基　　金：国家重点自然科学基金“无线、集成化无源传感器技术基础研究”,编号:61136006;国家02专项“集成电路与传感器集成制造与生产技术”,编号:2011ZX02507

摘　　要：提出了一种与CMOS工艺兼容、高响应率、低噪声的微机械热电堆红外探测器。该结构热电偶数目为两对,材料为P/N型多晶硅,吸收层材料为TiN。采用较少热电偶对的方式来降低噪声,引入共振谐振腔结构来提高红外吸收率。阐述了探测器的基本工作原理,通过仿真得到其重要的性能参数,并给出了器件具体的工艺流程,对器件尺寸进行了优化。理论上,其响应率大于1000 V/W,探测率大于2×108cmHz1/2W-1,噪声等效温差小于20mK,时间常数小于10ms,电阻值小于20k。A kind of micromechanical thermopile infrared detector that compatible with CMOS process is proposed, which has higher responsivity and lower noise. The detector, whose absorption layer material is TiN, has two pair of thermopiles with P/N polysilicon as the thermopiles material. The resonant cavity is introduced to improve the infrared absorption, while the noise is reduced by the decrease of thermopiles. The basic principle is provided, important performance parameters are obtained by simulation, and fabrication process of the detector is analyzed. The size of the device is optimized. Theoretically, the responsivity can be larger than 1000 V/W, detectivity is larger than 2×10^8cmHz^1/2W^-1, time constant value is smaller than 20 ms, noise equivalent temperature difference is smaller than 30 mK and value of the resistance is smaller than 20kΩ.

关 键 词：热电堆 红外探测器 CMOS兼容 谐振腔 TIN 

分 类 号：TN215[电子电信—物理电子学]