溶胶-凝胶法制备Mg_(0.2)Zn_(0.8)O阻变薄膜的研究  

Mg_(0.2)Zn_(0.8)O Resistive Switching Films Prepared By Sol-gel Process

作　　者：高书明[1] 王华[1] 许积文[1] 单旭[1] 赵霞妍[1] 

机构地区：[1]桂林电子科技大学材料科学与工程学院,广西信息材料重点实验室,广西桂林541004

出　　处：《电工材料》2012年第3期25-27,37,共4页Electrical Engineering Materials

基　　金：国家自然科学基金(批准号:61066001)资助的课题

摘　　要：采用溶胶-凝胶工艺在氧化铟锡(ITO)玻璃衬底上制备Mg0.2Zn0.8O阻变薄膜,研究了退火温度和薄膜层数对Mg0.2Zn0.8O薄膜生长行为、漏电流性能的影响。研究发现,Mg0.2Zn0.8O薄膜是多晶态结晶结构,薄膜的(100)、(002)和(101)晶面所对应衍射峰的强度随镀制薄膜层数的增多和退火温度的升高明显增强。结果表明,随退火温度的升高,高阻态(HRS)和低阻态(LRS)的漏电流减小;然而,HRS时薄膜的漏电流却随Mg0.2Zn0.8O薄膜层数的增多而变大。退火温度和薄膜厚度改变Mg0.2Zn0.8O阻变薄膜中氧空穴和缺陷的数量,进而影响Mg0.2Zn0.8O薄膜的漏电流。Mg02.Zn0.8O resistive switching film was prepared by sol-gel process and it grew on the ITO glass substrate. The effects of annealing temperature and film layers on the growth behavior and the leakage current property of Mg02.Zn0.8O film were studied. The study found that the Mg02.Zn0.8O film is polycrystalline and the diffraction intensity that correspond to （100）, （002）, （101） crystal face is enhanced as annealing temperature and film layers increase. Results show that the leakage current of FIRS and LRS declines as the annealing temperature increases; while the leakage current of HRS rises with the increase of Mg02.Zn0.8O film layers. The annealing tempera- ture and film thickness can change the oxygen vacancies and defects in Mg02.Zn0.8O resistive switch- ing film, and thus impact on the leakage current of the Mg02.Zn0.8O film.

关 键 词：Mg02.Zn0.8O 溶胶-凝胶工艺 漏电流 

分 类 号：TM205.1[一般工业技术—材料科学与工程] O484.4[电气工程—电工理论与新技术]