一款低噪声CMOS运算放大器的改进与设计  

Improvement and Design of the Low-Noise CMOS Operational Amplifier

作　　者：郭虎[1] 

机构地区：[1]兰州交通大学,甘肃兰州730070

出　　处：《电脑与电信》2012年第9期65-67,共3页Computer & Telecommunication

摘　　要：采用台积电(TSMC)0.18um标准RF CMOS工艺进行仿真验证;改进了器件的噪声模型,给出了在功耗和阻抗匹配条件下噪声性能优化的设计方法。在遵守模拟电路设计的八边形法则的基础上,对参数进行折衷考虑(trade-off)和整体优化处理。仿真结果表明,此运算放大器的各项主要参数均满足预期要求,性能优异。This paper completes the simulation verification using RF CMOS process of Taiwan Semiconductor Manufacturing （TSMC） 0.18 um standard. It improves the device noise model, proposes the design method of noise performance optimization under the power consumption and impedance matching condition. Abiding by the octagon rule of analog circuit design, all the parameters are made a compromise and optimized. The simulation results show that the key parameters of the operational amplifier meet the expected requirement, and the performance is excellent.

关 键 词：低噪声放大器 共源共栅 密勒效应 补偿电容 

分 类 号：TN386[电子电信—物理电子学]