CIGS薄膜太阳能电池无镉缓冲层制备方法的研究现状  

Deposition Technologies of Cd-Free Buffer Layers in Solar Cells Made of Copper Indium Gallium Diselenide Films

作　　者：霍晓旭 莫晓亮[1] 陈国荣[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《真空科学与技术学报》2012年第9期834-840,共7页Chinese Journal of Vacuum Science and Technology

基　　金：上海市教育委员会科研创新项目(11ZZ02);教育部留学回国人员科研启动基金资助项目

摘　　要：回顾了近年来CIGS薄膜太阳能电池无镉缓冲层的研究进展;着重介绍了In2S3,ZnS,Zn1-xMgxO三种可替代CdS缓冲层材料的常用制备方法及相关特性,并且对应给出了每种材料和方法获得的电池组件效率。展望了无镉缓冲层的发展前景,分析了化学水浴、原子层沉积、溅射三种缓冲层沉积技术各自在大规模工业化应用中的优劣势。认为溅射沉积技术是现阶段最理想的工业化制备技术,同时指出了无镉缓冲层在大规模工业化应用中亟需解决的问题。The latest progress in the development of deposition technology of the Cd-free buffer layers in the solar cells made of copper indium gallium diselenide（CIGS） films was tentatively reviewed.The discussions focused on three topics：first,the film growth techniques and related properties of the three alternative Cd-free buffer layer materials（In2S3,ZnS,and Zn1-xMgxO）;next,the possible impacts of the three alternative films and their deposition techniques on the fabrication and performance of the solar cells;finally,the development trends of the Cd-free layers in fabricating the CIGS solar cells.The strengths and weaknesses of the techniques,including the chemical bath deposition（CBD）,atomic layer deposition（ALD） and sputtering depositions,on industrial scale production were evaluated in a thought-provoking way.We suggest that the sputtering deposition be most feasible to large scale industrial production.The technical problems to be solved were also discussed.

关 键 词：薄膜太阳电池 CIGS 缓冲层 化学水浴法 原子层沉积 溅射 

分 类 号：TM914.42[电气工程—电力电子与电力传动]