斜切蓝宝石衬底MOCVD生长GaN薄膜的透射电镜研究  

TEM study of GaN films on vicinal sapphire(0001) substrates by MOCVD

作　　者：林志宇[1] 张进成[1] 许晟瑞[1] 吕玲[1] 刘子扬[1] 马俊彩[1] 薛晓咏[1] 薛军帅[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安710071

出　　处：《物理学报》2012年第18期343-348,共6页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(973计划)(批准号:2011CBA00600);国家科技重大专项(批准号:2008ZX01002-002);国家自然科学基金重大项目(批准号:60890191);中央高校基本科研业务费专项资金(批准号:K50511250002)~~

摘　　要：利用MOCVD技术在斜切角度为0.3°的c面蓝宝石衬底上生长了非故意掺杂GaN薄膜,并采用透射电子显微镜对材料的质量和材料内部缺陷进行了分析.研究发现斜切蓝宝石衬底上外延的GaN材料中,位错在距离衬底0.8μm附近大量湮灭,同时位错扎堆出现.基于上述现象,提出了斜切衬底上GaN材料中位错的湮灭机制,解释了斜切衬底能够提高GaN晶体质量的原因.Quality properties and internal defects of unintentionally doped GaN films grown on 0.3~ vicinal sapphire （0001） substrates by MOCVD are investigated by TEM. The results show that plenty of dislocations in the GaN films prepared on vicinal sapphire substrates are annihilated in the areas with a distance of 0.8 [xm away from substrates, and that dislocations gather in the GaN films. Based on these phenomena, a mechanism for dislocation annihilation in the GaN film prepared on vicinal substrate is proposed, which is capable of explaining the fact that vicinal substrates are able to improve the qualities of GaN films.

关 键 词：GaN 斜切衬底 透射电子显微镜.位错 

分 类 号：TN304.055[电子电信—物理电子学]