A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO_2 /Si stacked MOSFETs  

作　　者：马飞 刘红侠 樊继斌 王树龙 

机构地区：[1]Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Material and Devices,School of Microelectronics,Xidian University

出　　处：《Chinese Physics B》2012年第10期439-445,共7页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. 60936005 and 61076097);the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China (Grant No. 708083);the Fundamental Research Funds for the Central Universities (Grant No. 20110203110012)

摘　　要：In this paper the influences of the metal-gate and high-k/SiO 2 /Si stacked structure on the metal-oxide-semiconductor field-effect transistor（MOSFET） are investigated.The flat-band voltage is revised by considering the influences of stacked structure and metal-semiconductor work function fluctuation.The two-dimensional Poisson＇s equation of potential distribution is presented.A threshold voltage analytical model for metal-gate/high-k/SiO 2 /Si stacked MOSFETs is developed by solving these Poisson＇s equations using the boundary conditions.The model is verified by a two-dimensional device simulator,which provides the basic design guidance for metal-gate/high-k/SiO 2 /Si stacked MOSFETs.In this paper the influences of the metal-gate and high-k/SiO 2 /Si stacked structure on the metal-oxide-semiconductor field-effect transistor（MOSFET） are investigated.The flat-band voltage is revised by considering the influences of stacked structure and metal-semiconductor work function fluctuation.The two-dimensional Poisson＇s equation of potential distribution is presented.A threshold voltage analytical model for metal-gate/high-k/SiO 2 /Si stacked MOSFETs is developed by solving these Poisson＇s equations using the boundary conditions.The model is verified by a two-dimensional device simulator,which provides the basic design guidance for metal-gate/high-k/SiO 2 /Si stacked MOSFETs.

关 键 词：metal-gate HIGH-K work function flat-band voltage threshold voltage metal-oxide-semiconductor field-effect transistor 

分 类 号：TN386[电子电信—物理电子学]