BaAl_2S_4:Eu溅射靶材合成方法研究  

Synthetic Process of BaAl_2S_4:Eu Sputtering Target

作　　者：喻志农[1] 孔祥君[1] 张东璞[1,2] 薛唯[1] 

机构地区：[1]北京理工大学光电学院,北京100081 [2]中国空间技术研究院,北京100094

出　　处：《北京理工大学学报》2012年第8期855-858,共4页Transactions of Beijing Institute of Technology

基　　金：北京市自然科学基金资助项目(4112049)

摘　　要：采用放电等离子烧结(SPS)方法和粉末烧结法制备BaAl2S4:Eu溅射靶材,分析了靶材成分和结构特性以及利用靶材制备薄膜的发光特性.实验结果表明,SPS烧结的BaAl2S4:Eu溅射靶材的纯度高,无其它硫化物形成,被氧化的可能性小,靶材致密,气孔少;形成薄膜的PL谱主要是470nm处的蓝光发射.粉末烧结法制备的Ba-Al2S4:Eu溅射靶材的纯度低,靶材被氧化的几率大,气孔多,不致密,呈三维网状结构;在470nm处的蓝光发射峰值相对较弱.放电等离子烧结方法更适合制备BaAl2S4:Eu溅射靶材.Europium-doped barium thioaluminate （BaAl2S4： Eu） sputtering targets were synthesized by the process of spark plasma sintering （SPS） and powder sintering, respectively. The components and structures of the targets were analyzed. The luminescence properties of the films deposited by the targets were also observed. It is found that the component parts contained in BaAl2S4：Eu target synthesized by SPS have high purity and density with less hole, and no oxides or other sulfides are observed. Photoluminescence （PL） spectrum of the film shows there is a blue emission main peak at 470 nm. While the compounds contained in BaAl2S4：Eu target synthesized by powder sintering have low purity and density with more holes like three- dimensional network structure, and the target is easy to be oxidized. PL spectrum of the deposited film shows the blue emission peak at 470 nm is relatively weak. In contrast, the spark plasma sintering method is more suitable for preparing BaAl2S4：Eu sputtering target.

关 键 词：发光材料 溅射靶材 放电等离子烧结 BaAl2S4:Eu PL光谱 

分 类 号：TN104[电子电信—物理电子学]