Effects of growth temperature on high-quality In_(0.2)Ga_(0.8)N layers by plasma-assisted molecular beam epitaxy  

作　　者：张东炎 郑新和 李雪飞 吴渊渊 王建峰 杨辉 

机构地区：[1]Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences [2]Graduate University of the Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2012年第10期21-24,共4页半导体学报（英文版）

基　　金：supported by the SONY-SINANO Joint Project(No.Yl AAQ11001);the Suzhou Solar Cell Research Project(No.ZXJ0903);the Ministry of Science and Technology of China(No.2010DFA22770)

摘　　要：High-quality InGaN epilayers were grown on a GaN template at temperatures of 520 and 580℃via plasma-assisted molecular beam epitaxy.The X-ray rocking curve full widths at half maximum(FWHM) of(10.2) reflections is 936 arcsec for the 50-nm-thick InGaN layers at the lower temperature.When the growth temperature increases to 580℃,the FWHM of(00.2) reflections for these samples is very narrow and keeps similar,while significant improvement of(10.2) reflections with an FWHM value of 612 arcsec has been observed.This improved quality in InGaN layers grown at 580℃is also reflected by the much larger size of the crystalline column from the AFM results,stronger emission intensity as well as a decreased FWHM of room temperature PL from 136 to 93.9 meV.High-quality In0.2Ga0.8N epilayers were grown on a GaN template at temperatures of 520 and 580℃via plasma-assisted molecular beam epitaxy.The X-ray rocking curve full widths at half maximum（FWHM） of（10.2） reflections is 936 arcsec for the 50-nm-thick InGaN layers at the lower temperature.When the growth temperature increases to 580℃,the FWHM of（00.2） reflections for these samples is very narrow and keeps similar,while significant improvement of（10.2） reflections with an FWHM value of 612 arcsec has been observed.This improved quality in InGaN layers grown at 580℃is also reflected by the much larger size of the crystalline column from the AFM results,stronger emission intensity as well as a decreased FWHM of room temperature PL from 136 to 93.9 meV.

关 键 词：INGAN PA-MBE quality solar cells 

分 类 号：TN304.054[电子电信—物理电子学]