An InP-based heterodimensional Schottky diode for terahertz detection  

作　　者：闻孺铭 孙浩 滕腾 李凌云 孙晓玮 

机构地区：[1]Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences [2]Graduate University of the Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2012年第10期29-32,共4页半导体学报（英文版）

基　　金：supported by the National Basic Research Program of China(No.2009CB320207);the Chinese Academy of Sciences (No.YYY J-1123-3)

摘　　要：We present an InP-based heterodimensional Schottky diode（HDSD）,which has so far never been reported in the literature.Compared to a GaAs-based HDSD,the InP-based HDSD is expected to have better high frequency performance and operational conditions resulting from its higher mobility and concentration of 2D electron gas（2DEG） as well as its smaller Schottky barrier height.The cutoff frequency of the InP-based HDSD obtained by the AC measurement is more than 500 GHz,which shows its potential application in terahertz detection.We present an InP-based heterodimensional Schottky diode（HDSD）,which has so far never been reported in the literature.Compared to a GaAs-based HDSD,the InP-based HDSD is expected to have better high frequency performance and operational conditions resulting from its higher mobility and concentration of 2D electron gas（2DEG） as well as its smaller Schottky barrier height.The cutoff frequency of the InP-based HDSD obtained by the AC measurement is more than 500 GHz,which shows its potential application in terahertz detection.

关 键 词：Schottky barrier diode heterodimensional Schottky diode INP terahertz detection 

分 类 号：TN31[电子电信—物理电子学]