High voltage SOI LDMOS with a compound buried layer  

作　　者：罗小蓉 胡刚毅 周坤 蒋永恒 王沛 王琦 罗尹春 张波 李肇基 

机构地区：[1]Science and Technology on Analog Integrated Circuit Laboratory [2]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China

出　　处：《Journal of Semiconductors》2012年第10期37-41,共5页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.61176069,60976060);the National Key Laboratory of Analogue Integrated Circuit,China(No.9140C090304110C0905)

摘　　要：An SOI LDMOS with a compound buried layer（CBL） was proposed.The CBL consists of an upper buried oxide layer（UBOX） with a Si window and two oxide steps,a polysilicon layer and a lower buried oxide layer （LBOX）.In the blocking state,the electric field strengths in the UBOX and LBOX are increased from 88 V/μm of the buried oxide（BOX） in a conventional SOI（C-SOI） LDMOS to 163 V/μm and 460 V/μm by the holes located on the top interfaces of the UBOX and LBOX,respectively.Compared with the C-SOI LDMOS,the CBL LDMOS increases the breakdown voltage from 477 to 847 V,and lowers the maximal temperature by 6 K.An SOI LDMOS with a compound buried layer（CBL） was proposed.The CBL consists of an upper buried oxide layer（UBOX） with a Si window and two oxide steps,a polysilicon layer and a lower buried oxide layer （LBOX）.In the blocking state,the electric field strengths in the UBOX and LBOX are increased from 88 V/μm of the buried oxide（BOX） in a conventional SOI（C-SOI） LDMOS to 163 V/μm and 460 V/μm by the holes located on the top interfaces of the UBOX and LBOX,respectively.Compared with the C-SOI LDMOS,the CBL LDMOS increases the breakdown voltage from 477 to 847 V,and lowers the maximal temperature by 6 K.

关 键 词：SOI electric field specific on-resistance breakdown voltage 

分 类 号：TN386[电子电信—物理电子学]